Comparative Studies on Different Radiation Hardened by Design (RHBD) Memory Cells

Abstract

Abstract: Electronic components and circuits, when they are working in radiation environment undergo radiation impact like Single Event Effects (SEE), Displacement Damage, Total Ionization Dose etc., These effects are mainly caused by deposition of Ionization energy in target material i.e., electronic components and circuits. These effects lead to wrong operation of circuit or may even lead to damage of the circuit. This paper mainly concentrates on Single Event Effects and in these effects, this paper focuses on Single Event Upset (SEU) and Multiple Bit Upset (MBU) phenomenon. Radiation Hardened by Design (RHBD) is a design technique used to design different RHBD memory cells to avoid SEU and MBU. RHBD is a design technique where the number of transistors of the design are increased and arranged in such a way that they avoid these effects by design itself. These different memory cells are designed and simulated using Cadence Virtuoso and Cadence Spectre in 45nm technology. The power, noise, delay analysis of different memory cells is done, and failure rate is calculated using Monte Carlo Simulation. The layouts of different memory cells are drawn using Microwind 3.5 tool. The results of different memory cells are compared.

Index Terms: Single Event Effects (SEE), Radiation Hardened by Design (RHBD), Single Event Upset (SEU), Multiple Bit Upset (MBU).